BLC10G20LS-240PWT - Power LDMOS transistor

Description

240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

• Excellent ruggedness.
• Excellent video bandwidth enabling full band operation.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Designed for low memory effects providing excellent pre-distortability.
• Device can operate with the supply current delivered.