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BLC10G18XS-400AVT
Power LDMOS transistor
Rev. 1 — 19 April 2018
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit (VDS = 32 V) and production circuit (VDS = 28 V); IDq = 860 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified.
Test signal
f (MHz)
VDS
PL(AV)
Gp
D
ACPR
(V)
(W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
28
56
16.5
49.0
29.7 [1]
1805 to 1880
32
93
17.0
49.5
29.5 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on CCDF.
1.
BLC10G18XS-400AVT Datasheet
