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BLC10G18XS-552AVT
Power LDMOS transistor
Rev. 1 — 31 October 2019
Product data sheet
1. Product profile
1.1 General description
550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 30 V; IDq = 950 mA (main); VGS(amp)peak = 1.1 V, unless otherwise specified.
Test signal
f
VDS
PL(AV) Gp
D
ACPR
(MHz)
(V)
(dBm) (dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
30
49.5
16.8
48.3
32.1 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on CCDF.
1.
BLC10G18XS-552AVT Datasheet
