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BLC10G20LS-240PWT
Power LDMOS transistor
Rev. 1 — 20 April 2017
Product data sheet
1. Product profile
1.1 General description
240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq VDS PL(AV) Gp D RLin ACPR5M
(MHz)
(mA) (V) (W) (dB) (%) (dB) (dBc)
2-carrier W-CDMA
1805 to 1880 1600 28 60
19.3 30 16 32 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.
BLC10G20LS-240PWT Datasheet
