Full PDF Text Transcription for BLC10G18XS-400AVT (Reference)
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BLC10G18XS-400AVT Power LDMOS transistor Rev. 1 — 19 April 2018 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS packaged asymmetric Doherty powe...
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e 1.1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit (VDS = 32 V) and production circuit (VDS = 28 V); IDq = 860 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified. Test signal f (MHz) VDS PL(AV) Gp D ACPR (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 28 56 16.5 49.0 29.7 [1] 1805 to 1880 32 93 17.0 49.5 29.5 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 %
BLC10G18XS-400AVT Datasheet
