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BLC2425M10LS250
Power LDMOS transistor
Rev. 3 — 19 April 2019
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS-based power transistor suitable for use in a variety of commercial and consumer cooking, industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
The BLC2425M10LS250 is designed for high-power CW applications and is assembled in a high performance plastic package.
Table 1. Typical performance
RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 °C in a class-AB application circuit.
Test signal
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W)
(dB)
(%)
CW
2450
32 260
15.2 68.5
CW pulsed [1]
2450
32 260
15.3 68.8
[1] tp = 100 μs; δ = 10 %.
1.
BLC2425M10LS250 Datasheet
