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BLC10G27LS-320AVT - Power LDMOS transistor

General Description

320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth.
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLC10G27LS-320AVT
Manufacturer Ampleon
File Size 643.61 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC10G27LS-320AVT Datasheet

Full PDF Text Transcription for BLC10G27LS-320AVT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BLC10G27LS-320AVT. For precise diagrams, and layout, please refer to the original PDF.

BLC10G27LS-320AVT Power LDMOS transistor Rev. 2 — 1 December 2017 Product data sheet 1. Product profile 1.1 General description 320 W LDMOS packaged asymmetrical Doherty ...

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ile 1.1 General description 320 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2500 to 2700 28 50 16 D (%) 45 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.