BLC10G22LS-240PVT - Power LDMOS transistor

240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

• Excellent ruggedness.
• Excellent video bandwidth enabling full band operation.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Designed for low memory effects providing excellent pre-distortability.
• Internally matched for ease of use.
• Integrated ESD protectio.