* -40V/ -10A,RDS(ON)=100mΩ@VGS= -10V
* -40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package.

Pin Description ( TO-252-2L ) AFP9569 40V P-Channel Enhancement Mode MOSFET Features
* -40V/ -10A,RDS(ON)=100mΩ@VG.

AFP9569, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFP9560S

AFP9565S

AFP9566W

AFP9505WS

AFP9510S

AFP9530S

AFP9532S

AFP9575S

AFP9576

AFP9578WS

AFP9585S

AFP9407W

AFP9434WS

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts