* -60V/-25A,RDS(ON)= 26mΩ@VGS= -10V
* -60V/-15A,RDS(ON)= 36mΩ@VGS= -4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package d.

Pin Description ( TO-252-2L ) AFP9530S 60V P-Channel Enhancement Mode MOSFET Features
* -60V/-25A,RDS(ON)= 26mΩ@VG.

AFP9530S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFP9532S

AFP9505WS

AFP9510S

AFP9560S

AFP9565S

AFP9566W

AFP9569

AFP9575S

AFP9576

AFP9578WS

AFP9585S

AFP9407W

AFP9434WS

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