-40V/-5.0A,RDS(ON)= 80mΩ@VGS= -10V -40V/-3.5A,RDS(ON)= 105mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Backl.

Pin Description ( SOP-8P ) AFP9566W 40V P-Channel Enhancement Mode MOSFET Features -40V/-5.0A,RDS(ON)= 80mΩ@VGS= -10V .

AFP9566W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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