-40V/ -8.6A,RDS(ON)= 58mΩ@VGS= -10V -40V/ -6.2A,RDS(ON)= 86mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application B.

Pin Description ( TO-252-2L ) AFP9565S 40V P-Channel Enhancement Mode MOSFET Features -40V/ -8.6A,RDS(ON)= 58mΩ@VGS= -.

AFP9565S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFP9560S

AFP9566W

AFP9569

AFP9505WS

AFP9510S

AFP9530S

AFP9532S

AFP9575S

AFP9576

AFP9578WS

AFP9585S

AFP9407W

AFP9434WS

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