-60V/-18A,RDS(ON)= 68mΩ@VGS= -10V -60V/-12A,RDS(ON)= 78mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backl.

Pin Description ( TO-252-2L ) AFP9575S 60V P-Channel Enhancement Mode MOSFET Features -60V/-18A,RDS(ON)= 68mΩ@VGS= -10.

AFP9575S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFP9576

AFP9578WS

AFP9505WS

AFP9510S

AFP9530S

AFP9532S

AFP9560S

AFP9565S

AFP9566W

AFP9569

AFP9585S

AFP9407W

AFP9434WS

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts