z -60V/-7A,RDS(ON)= 28mΩ@VGS= -10V z -60V/-6A,RDS(ON)= 35mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z SOP-8P package design Application z .

Pin Description ( SOP-8P ) AFP9505WS 60V P-Channel Enhancement Mode MOSFET Features z -60V/-7A,RDS(ON)= 28mΩ@VGS= -10V.

AFP9505WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFP9510S

AFP9530S

AFP9532S

AFP9560S

AFP9565S

AFP9566W

AFP9569

AFP9575S

AFP9576

AFP9578WS

AFP9585S

AFP9407W

AFP9434WS

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