-30V/-4.6A,RDS(ON)= 125mΩ@VGS= -10V -30V/-3.6A,RDS(ON)= 165mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application M.

Pin Description ( SOT-89-3L ) AFP8995 30V P-Channel Enhancement Mode MOSFET Features -30V/-4.6A,RDS(ON)= 125mΩ@VGS= -1.

AFP8995, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFP8931

AFP8943

AFP8989

AFP8206

AFP8434S

AFP8451

AFP8452

AFP8463

AFP8473

AFP8473W

AFP8483

AFP02N8-000

AFP02N8-212

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