-30V/-5.0A,RDS(ON)=70mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.

Pin Description ( SOT-223 ) AFP8452 30V P-Channel Enhancement Mode MOSFET Features -30V/-5.0A,RDS(ON)=70mΩ@VGS=-10.0V .

AFP8452, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFP8451

AFP8434S

AFP8463

AFP8473

AFP8473W

AFP8483

AFP8206

AFP8931

AFP8943

AFP8989

AFP8995

AFP02N8-000

AFP02N8-212

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