-100V/-3.8A,RDS(ON)= 260mΩ@VGS= -10V -100V/-2.6A,RDS(ON)= 290mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application M.

Pin Description ( SOT-223 ) AFP8483 100V P-Channel Enhancement Mode MOSFET Features -100V/-3.8A,RDS(ON)= 260mΩ@VGS= -1.

AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFP8434S

AFP8451

AFP8452

AFP8463

AFP8473

AFP8473W

AFP8206

AFP8931

AFP8943

AFP8989

AFP8995

AFP02N8-000

AFP02N8-212

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