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AFP8206 - P-Channel MOSFET

Download the AFP8206 datasheet PDF. This datasheet also covers the AFP8206-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP8206, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-4.5A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=96mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP8206-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP8206
Manufacturer Alfa-MOS
File Size 501.37 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP8206 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP8434S P-Channel Enhancement Mode MOSFET
AFP8451 P-Channel Enhancement Mode MOSFET
AFP8452 P-Channel Enhancement Mode MOSFET
AFP8463 P-Channel Enhancement Mode MOSFET
AFP8473 P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP8206, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFP8206 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.5A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=96mΩ@VGS=1.