-60V/-3.0A,RDS(ON)=305mΩ@VGS=-10V -60V/-2.0A,RDS(ON)=330mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Motor a.

Pin Description ( SOT-223 ) AFP8451 60V P-Channel Enhancement Mode MOSFET Features -60V/-3.0A,RDS(ON)=305mΩ@VGS=-10V -.

AFP8451, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFP8452

AFP8434S

AFP8463

AFP8473

AFP8473W

AFP8483

AFP8206

AFP8931

AFP8943

AFP8989

AFP8995

AFP02N8-000

AFP02N8-212

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts