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AFP8434S - P-Channel Enhancement Mode MOSFET

Download the AFP8434S datasheet PDF. This datasheet also covers the AFP8434S-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFP8434S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -20V/-6.0A,RDS(ON)=50mΩ@VGS=4.5V -20V/-4.0A,RDS(ON)=67mΩ@VGS=2.5V -20V/-2.0A,RDS(ON)=90mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-223 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP8434S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP8434S
Manufacturer Alfa-MOS
File Size 674.49 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP8434S Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP8451 P-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP8434S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFP8434S 20V P-Channel Enhancement Mode MOSFET Features -20V/-6.0A,RDS(ON)=50mΩ@VGS=4.5V -20V/-4.0A,RDS(ON)=67mΩ@VGS=2.5V -20V/-2.0A,RDS(ON)=90mΩ@VGS=1.
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