* -60V/-3.6A,RDS(ON)= 145mΩ@VGS= -10V
* -60V/-2.6A,RDS(ON)= 155mΩ@VGS= -4.5V
* Super high density cell design for extremely low RDS (ON)
* SOT-89-3L packa.

Pin Description ( SOT-89-3L ) AFP8989 60V P-Channel Enhancement Mode MOSFET Features
* -60V/-3.6A,RDS(ON)= 145mΩ@V.

AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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