-200V/-1.0A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.6A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum.

Pin Description ( SOT-23-6L ) AFP3435W 200V P-Channel Enhancement Mode MOSFET Features -200V/-1.0A,RDS(ON)=2400 mΩ@VGS.

AFP3435W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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