30V/40A,RDS(ON)=2.8mΩ@VGS=10V 30V/32A,RDS(ON)=3.8mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application OR-ing Server.

Pin Description ( TO-220-3L ) AFN9803S 30V N-Channel Enhancement Mode MOSFET Features 30V/40A,RDS(ON)=2.8mΩ@VGS=10V 30.

AFN9803S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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