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AFN9977 Datasheet, Alfa-MOS

AFN9977 mosfet equivalent, n-channel enhancement mode mosfet.

AFN9977 Avg. rating / M : 1.0 rating-14

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AFN9977 Datasheet

Features and benefits

60V/8A,RDS(ON)= 118mΩ@VGS=10V 60V/6A,RDS(ON)= 130mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-.

Application

Features 60V/8A,RDS(ON)= 118mΩ@VGS=10V 60V/6A,RDS(ON)= 130mΩ@VGS=4.5V Super high density cell design for extremely low.

Description

AFN9977, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

Image gallery

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TAGS

AFN9977
N-Channel
Enhancement
Mode
MOSFET
Alfa-MOS

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