AFN9498 mosfet equivalent, n-channel enhancement mode mosfet.
100V/5A,RDS(ON)= 135mΩ@VGS=10V 100V/3A,RDS(ON)= 145mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-25.
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100V/5A,RDS(ON)= 135mΩ@VGS=10V 100V/3A,RDS(ON)= 145mΩ@VGS=4.5V Super high density cell design for extremely l.
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