AFN9910 Datasheet, Alfa-MOS

100V/4A,RDS(ON)= 320mΩ@VGS=10V 100V/4A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-25.

Features 100V/4A,RDS(ON)= 320mΩ@VGS=10V 100V/4A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely l.

AFN9910, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN9923S

AFN9971

AFN9972S

AFN9977

AFN9987

AFN9990S

AFN9995S

AFN9997

AFN9004S

AFN9498

AFN9530

AFN9803S

AFN1010S