* 100V/8A,RDS(ON)= 120mΩ@VGS=10V
* 100V/6A,RDS(ON)= 125mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TO-252-2L package design .

Features
* 100V/8A,RDS(ON)= 120mΩ@VGS=10V
* 100V/6A,RDS(ON)= 125mΩ@VGS=4.5V
* Super high density cell desi.

AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN9990S

AFN9995S

AFN9997

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