AFN9995S mosfet equivalent, n-channel enhancement mode mosfet.
100V/20A,RDS(ON)= 45mΩ@VGS=10V 100V/16A,RDS(ON)= 50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-25.
Features
100V/20A,RDS(ON)= 45mΩ@VGS=10V 100V/16A,RDS(ON)= 50mΩ@VGS=4.5V Super high density cell design for extremely l.
Image gallery