AFN9972S Datasheet, Alfa-MOS

60V/35A,RDS(ON)= 15mΩ@VGS=10V 60V/25A,RDS(ON)= 18mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-.

Features 60V/35A,RDS(ON)= 15mΩ@VGS=10V 60V/25A,RDS(ON)= 18mΩ@VGS=4.5V Super high density cell design for extremely low.

AFN9972S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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