AFN9530 Datasheet, Alfa-MOS

90V/15A,RDS(ON)= 78mΩ@VGS=10V 90V/12A,RDS(ON)= 88mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-2L package design Pin Description ( TO-220-.

Features 90V/15A,RDS(ON)= 78mΩ@VGS=10V 90V/12A,RDS(ON)= 88mΩ@VGS=4.5V Super high density cell design for extremely low.

AFN9530, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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