100V/4.6A,RDS(ON)=130mΩ@VGS=10V 100V/3.6A,RDS(ON)=138mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and.

Pin Description ( SOT-89-3L ) AFN8988W 100V N-Channel Enhancement Mode MOSFET Features 100V/4.6A,RDS(ON)=130mΩ@VGS=10V.

AFN8988W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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