AFN8936 datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

60V/4.6A,RDS(ON)=48mΩ@VGS=10V 60V/3.6A,RDS(ON)=54mΩ@VGS=4.5V 60V/2.0A,RDS(ON)=95mΩ@VGS=3.3V Super high density cell design for extremely low RDS (ON) SOT-89-3L package de.

Application

Pin Description ( SOT-89-3L ) AFN8936 60V N-Channel Enhancement Mode MOSFET Features 60V/4.6A,RDS(ON)=48mΩ@VGS=10V 60V.

Description

AFN8936, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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