20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V 20V/2.5A,RDS(ON)=20mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) ESD Protection ( 2K.

Pin Description ( DFN2X3-6L ) AFN8206WS 20V N-Channel Enhancement Mode MOSFET Features 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V .

AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.

AFN8205

AFN8411W

AFN8412W

AFN8415W

AFN8439W

AFN8459

AFN8471W

AFN8904

AFN8918

AFN8936

AFN8968

AFN8987W

AFN8988W

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