30V/6.0A,RDS(ON)=50mΩ@VGS=4.5V 30V/5.5A,RDS(ON)=60mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Power Manageme.

Pin Description ( SOT-223 ) AFN8439W 30V N-Channel Enhancement Mode MOSFET Features 30V/6.0A,RDS(ON)=50mΩ@VGS=4.5V 30V.

AFN8439W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN8411W

AFN8412W

AFN8415W

AFN8459

AFN8471W

AFN8205

AFN8206WS

AFN8904

AFN8918

AFN8936

AFN8968

AFN8987W

AFN8988W

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