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AFN8459 - N-Channel Enhancement Mode MOSFET

Download the AFN8459 datasheet PDF. This datasheet also covers the AFN8459-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN8459, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/6.0A,RDS(ON)=44mΩ@VGS=10V 30V/5.5A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN8459-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN8459
Manufacturer Alfa-MOS
File Size 584.86 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8459 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN8459, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-223 ) AFN8459 30V N-Channel Enhancement Mode MOSFET Features 30V/6.0A,RDS(ON)=44mΩ@VGS=10V 30V/5.5A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G D S Description Gate Drain Source Ordering Information Part Ordering No.