AFN8412W mosfet equivalent, n-channel enhancement mode mosfet.
* 100V/3.6A,RDS(ON)=300mΩ@VGS=10V
* 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* SOT-223 package design
.
Pin Description ( SOT-223 )
AFN8412W
100V N-Channel Enhancement Mode MOSFET
Features
* 100V/3.6A,RDS(ON)=300mΩ@VGS.
AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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