40V/4.6A,RDS(ON)=30mΩ@VGS=10V 40V/3.6A,RDS(ON)=54mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Loa.

Pin Description ( SOT-89-3L ) AFN8918 40V N-Channel Enhancement Mode MOSFET Features 40V/4.6A,RDS(ON)=30mΩ@VGS=10V 40V.

AFN8918, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN8904

AFN8936

AFN8968

AFN8987W

AFN8988W

AFN8205

AFN8206WS

AFN8411W

AFN8412W

AFN8415W

AFN8439W

AFN8459

AFN8471W

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts