100V/3.0A,RDS(ON)=300mΩ@VGS=10V 100V/2.0A,RDS(ON)=310mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and.

Pin Description ( SOT-89-3L ) AFN8968 100V N-Channel Enhancement Mode MOSFET Features 100V/3.0A,RDS(ON)=300mΩ@VGS=10V .

AFN8968, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN8904

AFN8918

AFN8936

AFN8987W

AFN8988W

AFN8205

AFN8206WS

AFN8411W

AFN8412W

AFN8415W

AFN8439W

AFN8459

AFN8471W

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