80V/4.6A,RDS(ON)=75mΩ@VGS=10V 80V/3.6A,RDS(ON)=85mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Loa.

Pin Description ( SOT-89-3L ) AFN8987W 80V N-Channel Enhancement Mode MOSFET Features 80V/4.6A,RDS(ON)=75mΩ@VGS=10V 80.

AFN8987W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN8988W

AFN8904

AFN8918

AFN8936

AFN8968

AFN8205

AFN8206WS

AFN8411W

AFN8412W

AFN8415W

AFN8439W

AFN8459

AFN8471W

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