AFN6520S datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

z 30V/16A,RDS(ON)=7.6mΩ@VGS=10V z 30V/13A,RDS(ON)=12.4mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC c.

Application

Pin Description ( DFN 5X6-8L ) AFN6520S 30V N-Channel Enhancement Mode MOSFET Features z 30V/16A,RDS(ON)=7.6mΩ@VGS=10V.

Description

AFN6520S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

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