65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( TO-22.

Features 65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V Super high density cell design for extremely l.

AFN6011S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN6018S

AFN6003S

AFN6027S

AFN6035S

AFN6095S

AFN6098S

AFN6202S

AFN6236S

AFN6238S

AFN6248S

AFN6252S

AFN6297S

AFN6298S

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