60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Synchronous Recti.

Pin Description ( TO-220-3L ) Features 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cel.

AFN6003S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN6011S

AFN6018S

AFN6027S

AFN6035S

AFN6095S

AFN6098S

AFN6202S

AFN6236S

AFN6238S

AFN6248S

AFN6252S

AFN6297S

AFN6298S

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts