AFN6236S datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

z 40V/20A,RDS(ON)=2.9mΩ@VGS=10V z 40V/15A,RDS(ON)=4.0mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC cu.

Application

Pin Description ( DFN 5X6-8L ) AFN6236S 40V N-Channel Enhancement Mode MOSFET Features z 40V/20A,RDS(ON)=2.9mΩ@VGS=10V.

Description

AFN6236S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

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