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AFN6252S - N-Channel MOSFET

Download the AFN6252S datasheet PDF. This datasheet also covers the AFN6252S-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN6252S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 150V/5.9A,RDS(ON)= 64mΩ@VGS=10V.
  • 150V/4.8A,RDS(ON)= 70mΩ@VGS=6V.
  • Super high density cell design for extremely low RDS (ON).
  • DFN5X6-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN6252S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN6252S
Manufacturer Alfa-MOS
File Size 424.25 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6252S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN6252S 150V N-Channel Enhancement Mode MOSFET General Description AFN6252S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features  150V/5.9A,RDS(ON)= 64mΩ@VGS=10V  150V/4.8A,RDS(ON)= 70mΩ@VGS=6V  Super high density cell design for extremely low RDS (ON)  DFN5X6-8L package design Application  Synchronous Rectifier  Power Supplies  LED TV Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No.
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