* 150V/5.9A,RDS(ON)= 64mΩ@VGS=10V
* 150V/4.8A,RDS(ON)= 70mΩ@VGS=6V
* Super high density cell design for extremely low RDS (ON)
* DFN5X6-8L package design .

Pin Description ( DFN5X6-8L ) Features
* 150V/5.9A,RDS(ON)= 64mΩ@VGS=10V
* 150V/4.8A,RDS(ON)= 70mΩ@VGS=6V
.

AFN6252S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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