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AFN6298S - N-Channel MOSFET

Download the AFN6298S datasheet PDF. This datasheet also covers the AFN6298S-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN6298S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN6298S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN6298S
Manufacturer Alfa-MOS
File Size 541.65 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6298S Datasheet

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN6298S 100V N-Channel Enhancement Mode MOSFET General Description AFN6298S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-262 ) Features 100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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