100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design Application DC/DC Primary Si.

Pin Description ( TO-262 ) Features 100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density ce.

AFN6298S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN6297S

AFN6202S

AFN6236S

AFN6238S

AFN6248S

AFN6252S

AFN6003S

AFN6011S

AFN6018S

AFN6027S

AFN6035S

AFN6095S

AFN6098S

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