60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design Pin Description ( TO-262 ) Appl.

Features 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS.

AFN6098S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN6095S

AFN6003S

AFN6011S

AFN6018S

AFN6027S

AFN6035S

AFN6202S

AFN6236S

AFN6238S

AFN6248S

AFN6252S

AFN6297S

AFN6298S

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