* 30V/3.6A,RDS(ON)=75mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=102mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* TSOP-6 package design App.

Pin Description ( TSOP-6 ) AFN6561 30V N-Channel Enhancement Mode MOSFET Features
* 30V/3.6A,RDS(ON)=75mΩ@VGS=10V .

AFN6561, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN6562

AFN6506S

AFN6520S

AFN6530S

AFN6003S

AFN6011S

AFN6018S

AFN6027S

AFN6035S

AFN6095S

AFN6098S

AFN6202S

AFN6236S

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