30V/3.6A,RDS(ON)=70mΩ@VGS=10V 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V 30V/2.2A,RDS(ON)=145mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package desi.

Pin Description ( TSOP-6 ) AFN6562 30V N-Channel Enhancement Mode MOSFET Features 30V/3.6A,RDS(ON)=70mΩ@VGS=10V 30V/3..

AFN6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

AFN6561

AFN6506S

AFN6520S

AFN6530S

AFN6003S

AFN6011S

AFN6018S

AFN6027S

AFN6035S

AFN6095S

AFN6098S

AFN6202S

AFN6236S

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