z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V z 30V/12A,RDS(ON)=3.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC cu.

Pin Description ( DFN 5X6-8L ) AFN6506S 30V N-Channel Enhancement Mode MOSFET Features z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V.

AFN6506S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

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