AFN2326S datasheet, mosfet equivalent, Alfa-MOS

Features and benefits

* 150V/1.5A,RDS(ON)=320mΩ@VGS=10V
* 150V/1.4A,RDS(ON)=340mΩ@VGS=6V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance.

Application

Pin Description ( SOT-23-3L ) AFN2326S 150V N-Channel Enhancement Mode MOSFET Features
* 150V/1.5A,RDS(ON)=320mΩ@V.

Description

AFN2326S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

Image gallery